Impact of ion energy on single-event upset
WitrynaImpact ionization is an efficient method to generate electron–hole pairs [1,3]. In N-channel MOSFET, the electrons are collected at the drain and the holes are retained in the body by a negative back-gate voltage. Writing “1” is fast but requires a high drain voltage () and consumes power. The parasitic bipolar transistor (PBT) is ... Witryna1 maj 2024 · Impact of ion energy on single-event upset. ... The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM. IEEE Trans. Nucl. Sci., 52 (2005), pp. 2125-2131, 10.1109/TNS.2005.860677. View Record in Scopus Google Scholar
Impact of ion energy on single-event upset
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Witryna11 gru 2007 · The effects of heavy ion energy and nuclear interactions on the single-event upset (SEU) and single-event latchup (SEL) response of commercial and radiation-hardened CMOS ICs are explored. Above the threshold LET for direct ionization-induced upsets, little difference is observed in single-event upset and …
Witryna5 lip 2024 · Abstract: The dependence of temperature and back-gate bias on single-event upset (SEU) sensitivity is investigated based on a 0.2- $\mu \text{m}$ double silicon-on-insulator (DSOI) technology. At room temperature, an obvious decrease in SEU cross section with the negative back-gate bias is experimentally observed for a … Witryna1 maj 2024 · The impact of ion energy on single-event upset was investigated by irradiating CMOS SRAMs with low and high-energy heavy ions. A variety of CMOS SRAM technologies was studied, with gate lengths ...
WitrynaThis thesis aims at determining the impact of thermal and intermediate energy neutrons (0.2-20 MeV) with respect to highly energetic particles on the Single Event Upset (SEU) and Latch-up (SEL ... Witryna8 lut 2024 · The single event upset effect of MOSFET under heavy ion irradiation and the influence of heavy ion irradiation on transient drain current are investigated. The results show that the transient drain current of MOSFET devices will increase rapidly when heavy ions are incident, and then the logic state of the devices will change.
Witryna20 mar 2024 · Abstract: The dependence of single event upset (SEU) on heavy ion energy was investigated for partially depleted silicon-on-insulator static random access memories. An unexpected phenomenon has been shown that the SEU cross sections decrease 70% with the increase of 12 C ion linear energy transfer (LET) from 1.7 to …
WitrynaSingle Event Effects (SEEs) are caused by a single, energetic particle, and can take on many forms. ... spacecraft designers have to be concerned with two main causes of Single Event Effects (SEEs): cosmic rays and high energy protons. For cosmic rays, SEEs are typically caused by its heavy ion component. These heavy ions cause a … philippians study pdfWitryna20 mar 2024 · The effects of heavy ion energy and nuclear interactions on the single-event upset (SEU) and single-event latchup (SEL) response of commercial and radiation-hardened CMOS ICs are explored. truly coozyWitryna1 lip 2007 · The impact of ion energy on single-event upset was investigated by irradiating CMOS SRAMs with low and high-energy heavy ions. A variety of CMOS SRAM technologies was studied, with gate lengths ranging from 1 to 0.5 {micro}m and integration densities from 16 Kbit to 1 Mbit. No significant differences were observed … truly citrus punch carbsWitrynaThe test aims to get the relationship between single event upset cross section, latchup cross section of a device in the flight control computer, and incident ion LET (linear energy transfer) and measure the sensitivity of a device single event upset and latchup. A unit that has not undergone a total dose test should be selected with priority. truly cooler with speakersWitryna1 lip 2006 · Single event upset mechanisms for low energy deposition events in silicon germanium HBTs.. United States: N. p., 2006. ... Impact of Heavy Ion Energy and Nuclear Interactions on Single-Event Upset and Latchup in Integrated Circuits. Conference Dodd, Paul; Schwank, James; ... philippians sufferingWitrynaSingle Event Effects (SEEs) are caused by a single, energetic particle, and can take on many forms. ... spacecraft designers have to be concerned with two main causes of Single Event Effects (SEEs): cosmic rays and high energy protons. For cosmic rays, … truly deliciousWitryna1 maj 2024 · Traditionally, the linear energy transfer (LET) is considered as the only important factor influencing the sensitivity of the single-event effect (SEE) in semiconductor devices [1]. However, studies in recent years indicated that except for LET, the incident heavy ions energy and species will also impact SEE's measured … philippians summary and outline